Method of fabricating polysilicon layer, thin film transistor, organic light emitting diode display device including the same, and method of fabricating the same
授权日
1900-01-01
公开（公告）号
US20110121309A1
申请日
2010-09-24
公开（公告）日
2011-05-26
当前申请（专利权）人
SAMSUNG DISPLAY CO., LTD.
发明人
LEE, DONG-HYUN | LEE, KI-YONG | SEO, JIN-WOOK | YANG, TAE-HOON | CHUNG, YUN-MO | PARK, BYOUNG-KEON | LEE, KIL-WON | PARK, JONG-RYUK | CHOI, BO-KYUNG | SO, BYUNG-SOO
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